| PART |
Description |
Maker |
| SKM50GB121D SKM50GAL101D SKM50GAL121D SKM50GAR121D |
SEMITRANS M IGBT Modules 50 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MII300-12A4 MDI300-12A4 MID300-12A4 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 330 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| VUB145 VUB145-16NO1 VUB116 VUB116-16NO1 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| VID75-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| CM20AD05-12H CM20AD00-12H |
CIB Modules: 600V
MITSUBISHI IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SKM145GB124DN SKM145GAL124DN |
Low Loss IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| SKM800GA125D |
Ultrafast IGBT Modules 760 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
